IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-aspect-ratio micromachining via deep X-ray lithography

Author(s): H. Guckel
Sponsor(s): IEEE Publication
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1998
Volume: 86
Page Count: 8
Page(s): 1,586 - 1,593
ISSN (Paper): 0018-9219
ISSN (Online): 1558-2256
DOI: 10.1109/5.704264
Regular:

High-aspect-ratio microsystems technology (HARMST) can be implemented by using thick photoresist technology, which requires X-ray photons for exposure. This was first realized in Germany via the... View More

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