IEC - International Electrotechnical Commission - IEC 62047-9:2011/COR1:2012
Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 8 March 2012 |
| Status: | published |
| ICS Code (Other semiconductor devices): | 31.080.99 |
Document History
IEC 62047-9:2011/COR1:2012
March 8, 2012
Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
A description is not available for this item.
July 13, 2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...