IEC - International Electrotechnical Commission - IEC 62047-16:2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 5 March 2015 |
| Status: | published |
| Page Count: | 21 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or... View More
Document History
IEC 62047-16:2015
March 5, 2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever...