IEC - International Electrotechnical Commission - IEC 62047-25:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

published
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Organization: IEC - International Electrotechnical Commission
Publication Date: 29 August 2016
Status: published
Page Count: 45
ICS Code (Other semiconductor devices): 31.080.99
abstract:

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based... View More

Document History

IEC 62047-25:2016
August 29, 2016
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based...
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