IEC - International Electrotechnical Commission - IEC 62047-9:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 13 July 2011 |
| Status: | published |
| Page Count: | 49 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc.,... View More
Document History
March 8, 2012
Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
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IEC 62047-9:2011
July 13, 2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...