IEEE - Institute of Electrical and Electronics Engineers, Inc. - TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
Author(s): | R.J. Milanowski ; M.P. Pagey ; L.W. Massengill ; R.D. Schrimpf ; M.E. Wood ; B.W. Offord ; R.J. Graves ; K.F. Galloway ; C.J. Nicklaw ; E.P. Kelley |
Sponsor(s): | IEEE Nuclear and Plasma Sciences Society |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 December 1998 |
Volume: | 45 |
Page Count: | 7 |
Page(s): | 2,593 - 2,599 |
ISSN (Paper): | 0018-9499 |
ISSN (Online): | 1558-1578 |
DOI: | 10.1109/23.736502 |
Regular:
Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as... View More