IEEE - Institute of Electrical and Electronics Engineers, Inc. - TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs

Author(s): R.J. Milanowski ; M.P. Pagey ; L.W. Massengill ; R.D. Schrimpf ; M.E. Wood ; B.W. Offord ; R.J. Graves ; K.F. Galloway ; C.J. Nicklaw ; E.P. Kelley
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1998
Volume: 45
Page Count: 7
Page(s): 2,593 - 2,599
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.736502
Regular:

Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as... View More

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