IEEE - Institute of Electrical and Electronics Engineers, Inc. - Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's

Author(s): W.E. Ansley ; J.D. Cressler ; D.M. Richey
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1998
Volume: 46
Page Count: 8
Page(s): 653 - 660
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.668678
Regular:

We investigate the base-profile design issues associated with optimizing ultrahigh vacuum/chemical vapor deposition (UHV/CVD) silicon-germanium (SiGe) heterojunction bipolar transistors (HBT's)... View More

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