IEEE - Institute of Electrical and Electronics Engineers, Inc. - A compact LDD MOSFET I-V model based on nonpinned surface potential

Author(s): Sheng-Lyang Jang ; Shau-Shen Liu ; Chorng-Jye Sheu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1998
Volume: 45
Page Count: 10
Page(s): 2,489 - 2,498
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.735726
Regular:

Based on nonpinned surface potential concept, in this paper we present a compact single-piece and complete I-V model for submicron lightly-doped drain (LDD) MOSFETs. The physics-based and... View More

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