IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lateral IGBT in thin SOI for high voltage, high speed power IC

Author(s): Ying-Keung Leung ; A.K. Paul ; J.D. Plummer ; S.S. Wong
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1998
Volume: 45
Page Count: 4
Page(s): 2,251 - 2,254
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.725263
Regular:

A high voltage LIGBT built in ultra-thin silicon-on-insulator (SOI) with a linearly graded doping profile is reported. The highest breakdown voltage of 720 V was measured for an LIGBT built... View More

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