IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling statistical dopant fluctuations in MOS transistors

Author(s): P.A. Stolk ; F.P. Widdershoven ; D.B.M. Klaassen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1998
Volume: 45
Page Count: 12
Page(s): 1,960 - 1,971
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.711362
Regular:

The impact of statistical dopant fluctuations on the threshold voltage V/sub T/ and device performance of silicon MOSFET's is investigated by means of analytical and numerical modeling. A new... View More

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