IEEE - Institute of Electrical and Electronics Engineers, Inc. - SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILC

Author(s): J. de Blauwe ; J. van Heudt ; D. Wellekens ; G. Groeseneken ; H.E. Maes
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1998
Volume: 45
Page Count: 6
Page(s): 1,745 - 1,750
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.704374
Regular:

In this paper a quantitative model for the steady-state component of the stress induced leakage current (SILC) is developed. The established model is based on the observation of basic degradation... View More

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