IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate

Author(s): Shubha ; B.B. Pal ; R.U. Khan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1998
Volume: 45
Page Count: 7
Page(s): 78 - 84
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.658814
Regular:

An analytical modelling has been carried out for an ion-implanted GaAs MESFET having a Schottky gate opaque to incident radiation. The radiation is absorbed in the device through the spacings of... View More

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