IEEE - Institute of Electrical and Electronics Engineers, Inc. - Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide

Author(s): Yung Hao Lin ; Chung Len Lee ; Tan Fu Lei
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1998
Volume: 45
Page Count: 4
Page(s): 567 - 570
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.658697
Regular:

In this work, the evidence of the stress-induced leakage current related to the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the... View More

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