IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental verification of the physics and structure of the bipolar junction transistor

Author(s): I. Martil ; J.M. Martin ; S. Garcia ; G. Gonzalez-Diaz
Sponsor(s): IEEE Education Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1998
Volume: 41
Page Count: 5
Page(s): 224 - 228
ISSN (Paper): 0018-9359
ISSN (Online): 1557-9638
DOI: 10.1109/13.704551
Regular:

The authors present an electrical characterization of discrete bipolar junction transistor (BJT) devices, with nonuniform doped emitter and base zones. The measurement of the I-V and C-V... View More

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