IEEE - Institute of Electrical and Electronics Engineers, Inc. - Test structure design for the evaluation of carrier-carrier scattering effect on hole and electron mobilities

Author(s): G.V. Persiano ; S. Bellone
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1997
Volume: 10
Page Count: 9
Page(s): 219 - 227
ISSN (Paper): 0894-6507
ISSN (Online): 1558-2345
DOI: 10.1109/66.572071
Regular:

In this paper we present a new three-terminal test structure that enables one to simply evaluate the reduction in the hole and electron mobilities due to the carrier-carrier scattering effect. The... View More

Advertisement