IEEE - Institute of Electrical and Electronics Engineers, Inc. - 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)

Author(s): A.K. Agarwal ; J.B. Casady ; L.B. Rowland ; S. Seshadri ; R.R. Siergiej ; W.F. Valek ; C.D. Brandt
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1997
Volume: 18
Page Count: 3
Page(s): 518 - 520
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.641431
Regular:

Silicon Carbide (4H-SiC), asymmetrical gate turn-off thyristors (GTO's) were fabricated and tested with respect to forward voltage drop (V/sub F/), forward blocking voltage, and turn-off... View More

Advertisement