IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device parameter extraction in the linear region of MOSFET's
Author(s): | H. Katto |
Sponsor(s): | IEEE Electron Devices Society |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 September 1997 |
Volume: | 18 |
Page Count: | 3 |
Page(s): | 408 - 410 |
ISSN (Paper): | 0741-3106 |
ISSN (Online): | 1558-0563 |
DOI: | 10.1109/55.622512 |
Regular:
A self-consistent technique is proposed to extract device parameters from the I-V characteristics of MOSFET's in the linear region. The three parameters V/sub T/, B/sub m/(=/spl beta//sub 0/) and... View More