IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device parameter extraction in the linear region of MOSFET's

Author(s): H. Katto
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1997
Volume: 18
Page Count: 3
Page(s): 408 - 410
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.622512
Regular:

A self-consistent technique is proposed to extract device parameters from the I-V characteristics of MOSFET's in the linear region. The three parameters V/sub T/, B/sub m/(=/spl beta//sub 0/) and... View More

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