IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-passivated copper gates for amorphous silicon thin-film transistors

Author(s): H. Sirringhaus ; S.D. Theiss ; A. Kahn ; S. Wagner
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1997
Volume: 18
Page Count: 3
Page(s): 388 - 390
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.605448
Regular:

A solution to the amorphous silicon transistor gate metallization problem in active matrix liquid crystal displays (AMLCD's) is demonstrated, in the form of a self-passivated copper (Cu) process.... View More

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