IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-performance double-modulation-doped InAlAs/InGaAs/InAs HFETs

Author(s): D. Xu ; H. Heiss ; S. Kraus ; M. Sexl ; G. Bohm ; G. Trankle ; G. Weimann ; G. Abstreiter
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1997
Volume: 18
Page Count: 4
Page(s): 323 - 326
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.596925
Regular:

We demonstrate the improvement of double-sided-doped InAlAs/InGaAs MODFETs by inserting a thin InAs layer in the center of the conventional InGaAs channel. A maximum extrinsic transconductance of... View More

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