IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transient pass-transistor leakage current in SOI MOSFET's

Author(s): F. Assaderaghi ; G.G. Shahidi ; L. Wagner ; M. Hsieh ; M. Pelella ; S. Chu ; R.H. Dennard ; B. Davari
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1997
Volume: 18
Page Count: 3
Page(s): 241 - 243
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.585341
Regular:

This paper reports an accurate method of measuring the anomalous leakage current in pass-gate MOSFET's unique to SOI devices. A high-speed measurement setup is used to provide experimental... View More

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