IEEE - Institute of Electrical and Electronics Engineers, Inc. - Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates

Author(s): O. Issanchou ; J. Barrau ; X. Marie ; J.-Y. Emery ; C. Fortin ; L. Goldstein
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1997
Volume: 33
Page Count: 5
Page(s): 2,277 - 2,281
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/3.644110
Regular:

Compressively strained GaInAsP quantum wells (QW's), with a square potential profile and grown on InP substrates, have demonstrated their high potential for the improvement of 1.55-/spl mu/m... View More

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