IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

Author(s): N. Tessler ; S. Marcinkevicius ; U. Olin ; C.K.V. Silfvenius ; B.F. Stalnacke ; G. Landgren
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1997
Volume: 3
Page Count: 5
Page(s): 315 - 319
ISSN (Paper): 1077-260X
ISSN (Online): 1558-4542
DOI: 10.1109/2944.605673
Regular:

Carrier transport across p-doped quantum wells (QWs) has been measured by time-resolved photoluminescence for a number of InGaAsP multiple-quantum-well (MQW) laser structures with different... View More

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