IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma doping dosimetry

Author(s): E.C. Jones ; N.W. Cheung
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1997
Volume: 25
Page Count: 11
Page(s): 42 - 52
ISSN (Paper): 0093-3813
ISSN (Online): 1939-9375
DOI: 10.1109/27.557484
Regular:

Plasma immersion ion implantation (PIII) is a large-area doping technique that can provide very high implant current at very low implant energy. Multiple ion species, plasma conditions, and... View More

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