IEEE - Institute of Electrical and Electronics Engineers, Inc. - Quantitative model of radiation induced charge trapping in SiO/sub 2/

Author(s): J.F. Conley, Jr. ; P.M. Lenahan ; B.D. Wallace ; P. Cole
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1997
Volume: 44
Page Count: 6
Page(s): 1,804 - 1,809
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.658946
Regular:

A predictive model of radiation induced oxide charging, thermodynamics and electron spin resonance measurements of defects known as E' centers, has been developed. The model is successfully tested... View More

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