IEEE - Institute of Electrical and Electronics Engineers, Inc. - A microwave model for high electron mobility transistors

Author(s): V. Kasemsuwan ; M.A. El Nokali
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1997
Volume: 45
Page Count: 8
Page(s): 420 - 427
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.563342
Regular:

In this paper, the authors present a high-frequency model for the high electron mobility transistor (HEMT). The model includes the distributed effects in the channel of the device through two... View More

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