IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nearly fully transparent InGaZnO thin film transistors with Mo-InGaZnO electrodes: The possibility of homogeneous InGaZnO based thin film transistors

2014 International Conference on Information Science, Electronics and Electrical Engineering (ISEEE)

Author(s): Hung-Chi Wu ; Chao-Hsin Chien
Sponsor(s): IEEE Sapporo Sect.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2014
Conference Location: Sapporo, Japan
Conference Date: 26 April 2014
Volume: 3
Page(s): 1,709 - 1,713
ISBN (CD): 978-1-4799-3195-8
ISBN (Electronic): 978-1-4799-3197-2
ISBN (Paper): 978-1-4799-3196-5
DOI: 10.1109/InfoSEEE.2014.6946214
Regular:

In this letter, we demonstrate high performance and highly transparent InGaZnO thin film transistors (IGZO-TFTs) with nearly metal-free Mo doped IGZO source/drain (S/D) electrodes by... View More

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