IEEE - Institute of Electrical and Electronics Engineers, Inc. - Variability-aware compact model strategy for 20-nm bulk MOSFETs

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Xingsheng Wang ; Dave Reid ; Liping Wang ; Alexander Burenkov ; Campbell Millar ; Binjie Cheng ; Andre Lange ; Juergen Lorenz ; Eberhard Baer ; Asen Asenov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 293 - 296
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931621
Regular:

In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension long-range process variation and local... View More

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