IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Akira Endoh ; Issei Watanabe ; Akifumi Kasamatsu ; Takashi Mimura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 261 - 264
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931613
Regular:

We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried... View More

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