IEEE - Institute of Electrical and Electronics Engineers, Inc. - A three-dimensional TCAD system focused on power and nano-scaled devices applications

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Yasuyuki Ookura ; Nobuhiko Kato ; Shin-ichiro Kobayashi ; Takuhito Kuwabara ; Masanori Harada ; Ken Yamaguchi ; Hideaki Koike
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 197 - 200
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931597
Regular:

A new 3-D TCAD system has been proposed aiming close coupling of first-principles calculator, process, and device simulators in response to requirements for ultra-small to high-power semiconductor... View More

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