IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Seongwook Choi ; Young June Park
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 157 - 160
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931587
Regular:

A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the... View More

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