IEEE - Institute of Electrical and Electronics Engineers, Inc. - DC, AC and noise simulation of organic semiconductor devices based on the master equation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Christoph Jungemann ; Christoph Zimmermann
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 137 - 140
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931582
Regular:

The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the... View More

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