IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of AlGaN/GaN HEMT degradation through TCAD simulations

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Hiu Y. Wong ; Nelson Braga ; R. V. Mickevicius ; Feng Gao ; Tomas Palacios
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 97 - 100
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931572
Regular:

This paper studies, through Three-Dimensional (3D) TCAD simulations, the formation of gate edge pits on the drain-side of GaN high electron mobility transistors (HEMTs) under electrical stress... View More

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