IEEE - Institute of Electrical and Electronics Engineers, Inc. - A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Stanislav Tyaginov ; Markus Bina ; Jacopo Franco ; Yannick Wimmer ; Dmitri Osintsev ; Ben Kaczer ; Tibor Grasser
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2014
Conference Location: Yokohama, Japan
Conference Date: 9 September 2014
Page(s): 89 - 92
ISBN (CD): 978-1-4799-5285-4
ISBN (Electronic): 978-1-4799-5288-5
ISBN (DVD): 978-1-4799-5286-1
ISBN (Paper): 978-1-4799-5287-8
ISSN (Paper): 1946-1569
DOI: 10.1109/SISPAD.2014.6931570
Regular:

We present and validate a novel physics-based model for hot-carrier degradation. The model incorporates such essential ingredients as a superposition of the multivibrational bond dissociation... View More

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