IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Germanium mole fraction variation at the source of a dielectrically modulated Tunneling FET based biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

Author(s): Sayan Kanungo ; Partha Sarathi Gupta ; Hafizur Rhaman
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2014
Conference Location: Combiatore, India
Conference Date: 6 March 2014
Page(s): 1 - 5
ISBN (Electronic): 978-1-4799-1356-5
ISBN (DVD): 978-1-4799-1355-8
DOI: 10.1109/ICDCSyst.2014.6926218
Regular:

In this work, the effect of Germanium mole fraction variation in the source region of a dielectrically modulated Silicon Tunneling Field Effect Transistor (DMTFET) based biosensor has been... View More

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