IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advantage of CNTFET characteristics over MOSFET to reduce leakage power

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

Author(s): Sanieet Kumar Sinha ; Saurabh Chaudhury
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2014
Conference Location: Combiatore, India
Conference Date: 6 March 2014
Page(s): 1 - 5
ISBN (Electronic): 978-1-4799-1356-5
ISBN (DVD): 978-1-4799-1355-8
DOI: 10.1109/ICDCSyst.2014.6926211
Regular:

In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime. Thereafter we have analyzed the effect of chiral vector, and temperature on threshold... View More

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