IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

Author(s): Neha Gupta ; Rishu Chaujar
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2014
Conference Location: Combiatore, India
Conference Date: 6 March 2014
Page(s): 1 - 5
ISBN (Electronic): 978-1-4799-1356-5
ISBN (DVD): 978-1-4799-1355-8
DOI: 10.1109/ICDCSyst.2014.6926154
Regular:

The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and... View More

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