IEEE - Institute of Electrical and Electronics Engineers, Inc. - RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

Author(s): A. Bhattacharjee ; T. R. Lenka
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2014
Conference Location: Combiatore, India
Conference Date: 6 March 2014
Page(s): 1 - 4
ISBN (Electronic): 978-1-4799-1356-5
ISBN (DVD): 978-1-4799-1355-8
DOI: 10.1109/ICDCSyst.2014.6926151
Regular:

In this paper we propose a new structure of InxAl1_xN/GaN based HEMT with gate length of 20nm. The InAlN barrier layer is intentionally doped to boost the "Figure... View More

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