IEEE - Institute of Electrical and Electronics Engineers, Inc. - A self-consistent model for hetero-gate all around tunnel FET

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

Author(s): B. Bhowmick ; K. Jena ; S. Baishya
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2014
Conference Location: Combiatore, India
Conference Date: 6 March 2014
Page(s): 1 - 5
ISBN (Electronic): 978-1-4799-1356-5
ISBN (DVD): 978-1-4799-1355-8
DOI: 10.1109/ICDCSyst.2014.6926147
Regular:

This paper proposes a new self-consistent model for 3D tunnel FET with all around hetero-gate oxide. Device structure has been optimized for channel length and source doping.... View More

Advertisement