IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental investigation on switching characteristics of high-current insulated gate bipolar transistors at low currents

2014 IEEE 2nd International Conference on Electrical Energy Systems (ICEES)

Author(s): Anirudh Guha ; Aniket Datta ; C. Rangesh Babu ; G. Narayanan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2014
Conference Location: Chennai, India
Conference Date: 7 January 2014
Page(s): 171 - 176
ISBN (CD): 978-1-4799-3738-7
ISBN (Electronic): 978-1-4799-3739-4
DOI: 10.1109/ICEES.2014.6924163
Regular:

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics... View More

Advertisement