IEEE - Institute of Electrical and Electronics Engineers, Inc. - n/sup +/-polysilicon gate PMOSFET's with indium doped buried-channels

Author(s): I.C. Kizilyalli ; F.A. Stevie ; J.D. Bude
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1996
Volume: 17
Page Count: 4
Page(s): 46 - 49
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.484119
Regular:

In this letter a n/sup +/-polysilicon gate PMOSFET with indium doped buried-channel is discussed, The gate length scaling of n/sup +/-polysilicon gate buried-length PMOSFET's is limited by the... View More

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