IEEE - Institute of Electrical and Electronics Engineers, Inc. - A surface potential based model for GaN HEMTs

2013 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)

Author(s): Shantanu Agnihotri ; Sudip Ghosh ; Avirup Dasgupta ; Yogesh Singh Chauhan ; Sourabh Khandelwal
Sponsor(s): IEEE Circuits Syst. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2013
Conference Location: Visakhapatnam, India
Conference Date: 19 December 2013
Page(s): 175 - 179
ISBN (CD): 978-1-4799-2750-0
ISBN (Electronic): 978-1-4799-2751-7
DOI: 10.1109/PrimeAsia.2013.6731200
Regular:

In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd... View More

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