IEEE - Institute of Electrical and Electronics Engineers, Inc. - SRAM row decoder design for wide voltage range in 28nm UTBB-FDSOI

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Author(s): Gregory Suraci ; Bastien Giraud ; Thomas Benoist ; Adam Makosiej ; Olivier Thomas
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2013
Conference Location: Monterey, CA, USA
Conference Date: 7 October 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4799-1361-9
DOI: 10.1109/S3S.2013.6716580
Regular:

This paper focuses on the design of SRAM row decoder for modern portable devices, in 28nm Ultra-Thin Body and Buried oxide (UTBB) Fully-Depleted SOI (FDSOI) technology. The proposed Mixed Single... View More

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