IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Author(s): K. Endo ; Y. Ishikawa ; Y. Liu ; T. Matsukawa ; S. O'uchi ; J. Tsukada ; S. Migita ; W. Mizubayashi ; Y. Morita ; H. Ota ; H. Yamauchi ; M. Masahara
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2013
Conference Location: Monterey, CA, USA
Conference Date: 7 October 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4799-1361-9
DOI: 10.1109/S3S.2013.6716563
Regular:

We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB... View More

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