IEEE - Institute of Electrical and Electronics Engineers, Inc. - Possibility of SOI based super steep subthreshold slope MOSFET for ultra low voltage application

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Author(s): Takayuki Mori ; Jiro Ida
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2013
Conference Location: Monterey, CA, USA
Conference Date: 7 October 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4799-1361-9
DOI: 10.1109/S3S.2013.6716550
Regular:

Ultra Low Power (ULP) LSI's require the steep subthreshold slope (SS) MOSFET. However, the theoretical SS limit of the conventional MOSFET is 60mV/dec at the room temperature. Recently, devices... View More

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