IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Author(s): Abhijeet Paul ; Chun-chen Yeh ; Theodorus Standaert ; Jeffrey B. Johnson ; Andres Bryant ; Neeraj Tripathi ; Gen Tsutsui ; Tenko Yamashita ; Veeraraghvan S. Basker ; Johnathan Faltermeier ; Jin Cho ; Huiming Bu ; Mukesh Khare
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2013
Conference Location: Monterey, CA, USA
Conference Date: 7 October 2013
Page(s): 1 - 2
ISBN (Electronic): 978-1-4799-1361-9
DOI: 10.1109/S3S.2013.6716521
Regular:

This work presents SOI finFETs with fin width (Dfin) scaled to sub 15nm. The process flow provides robust Dfin scaling as depicted by the universal electrostatic scaling of the DIBL and... View More

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