IEEE - Institute of Electrical and Electronics Engineers, Inc. - A hot hole-induced low-level leakage current in thin silicon dioxide films

Author(s): N. Matsukawa ; S. Yamada ; K. Amemiya ; H. Hazama
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1996
Volume: 43
Page Count: 6
Page(s): 1,924 - 1,929
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.543028
Regular:

A new kind of stress-induced low-level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the gate edge. Since voltage dependence... View More

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