IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hysteresis behaviour of top-down fabricated ZnO nanowire transistors

9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013)

Author(s): S. M. Sultan ; P. Ashburn ; R. Ismail ; H. M. H. Chong
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Conference Location: Langkawi, Malaysia
Conference Date: 25 September 2013
Page(s): 371 - 374
ISBN (CD): 978-1-4799-1181-3
ISBN (Electronic): 978-1-4799-1183-7
DOI: 10.1109/RSM.2013.6706553
Regular:

Top-down Zinc Oxide (ZnO) nanowire FETs have been fabricated using conventional photolithography, ZnO atomic layer deposition (ALD) and dry etching. This paper investigates the hysteresis... View More

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