IEEE - Institute of Electrical and Electronics Engineers, Inc. - Capacitance-voltage hysteresis of MIS device with PMMA:TiO 2 nanocomposite as gate dielectric

9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013)

Author(s): L. N. Ismail ; S. Adnan ; M. N. A. Sauqi ; M. N. Asiah ; Z. Habibah ; S. H. Herman ; M. Rusop
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Conference Location: Langkawi, Malaysia
Conference Date: 25 September 2013
Page(s): 289 - 292
ISBN (CD): 978-1-4799-1181-3
ISBN (Electronic): 978-1-4799-1183-7
DOI: 10.1109/RSM.2013.6706532
Regular:

In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on... View More

Advertisement