IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of silicon nitride ion sensitive field-effect transistor (ISFET)

9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013)

Author(s): Chong Soon Weng ; U. Hashim ; Wei-Wen Liu
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Conference Location: Langkawi, Malaysia
Conference Date: 25 September 2013
Page(s): 204 - 207
ISBN (CD): 978-1-4799-1181-3
ISBN (Electronic): 978-1-4799-1183-7
DOI: 10.1109/RSM.2013.6706509
Regular:

In this work, the fabrication of silicon nitride ion sensitive field-effect transistor is presented. The ISFET structure is similar to metal oxide semiconductor field-effect transistor (MOSFET)... View More

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