IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of phosphate buffer solution (PBS) concentration on the ion sensitive field-effect transistor (ISFET) detection

9th IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2013)

Author(s): Chong Soon Weng ; U. Hashim ; Wei-Wen Liu
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Conference Location: Langkawi, Malaysia
Conference Date: 25 September 2013
Page(s): 200 - 203
ISBN (CD): 978-1-4799-1181-3
ISBN (Electronic): 978-1-4799-1183-7
DOI: 10.1109/RSM.2013.6706508
Regular:

The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of... View More

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